Influence of trap filling and junction capacitance charging on photovoltage transients in HgCdTe-based infrared photodiode

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• 作者：Haoyang Cui (1)
  Yongpeng Xu (1)
  Wei Gao (1)
  Can Liu (1)
  Jialin Wang (1)
  Chaoqun Wang (1)
  Junjie Yang (1)
  Zhong Tang (1)
  
• 关键词：HgCdTe ; based infrared photodiode ; Transient photovoltage ; Time constant ; Junction capacitance ; Carrier trap
• 刊名：Optical and Quantum Electronics
• 出版年：2014
• 出版时间：August 2014
• 年：2014
• 卷：46
• 期：8
• 页码：1049-1054
• 全文大小：511 KB
• 参考文献：1. Cui, H.Y., Li, Z.F., Liu, Z.L., Wang, C., Chen, X.S., Hu, X.N., Ye, Z.H., Lu, W.: Modulation of the two-photon absorption by electric fields in HgCdTe photodiode. Appl. Phys. Lett. 92(2), 021128鈥?21130 (2008) CrossRef
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• 作者单位：Haoyang Cui (1)
  Yongpeng Xu (1)
  Wei Gao (1)
  Can Liu (1)
  Jialin Wang (1)
  Chaoqun Wang (1)
  Junjie Yang (1)
  Zhong Tang (1)
  
  1. School of electronic and information engineering, Shanghai University of Electric Power, 2013 Pingliang Road, Shanghai, 200090, China
  
• ISSN：1572-817X

文摘

Open circuit transient photovoltage (TPV) decay measurements have been carried out on HgCdTe-based infrared photodiode at different bias-light power illumination. By employing a picosecond pulsed laser excitation with wavelength of \(4.5\,\upmu \hbox {m}\) on steady background illumination, the TPV decay varying behavior has been observed. The effect of junction capacitance and carrier traps on TPV decay can be decreased to the minimum saturation values by increasing the bias illumination level. The study indicates the TPV decay time constants are dominated by the discharging of junction capacitance, trap emission and photocarrier recombination. The minority carrier lifetime are affected by the carrier injection level.