Self-aligned offset gate poly-Si TFTs using photoresist trimming technology

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• 作者：LongYan Wang (1) (2)
  Lei Sun (1)
  DeDong Han (1)
  Yi Wang (1)
  ManSun Chan (3)
  ShengDong Zhang (1) (4)
  
  1. Institute of Microelectronics ; Peking University ; Beijing ; 100871 ; China
  2. BOE Technology Co. Ltd. ; Beijing ; 100176 ; China
  3. Department of Electronic and Computer Engineering ; Hong Kong University of Science and Technology ; Hong Kong ; China
  4. School of Electronic and Computer Engineering ; Peking University ; Shenzhen ; 518055 ; China
  
• 关键词：photoresist trimming ; offset ; polycrystalline silicon (poly ; Si) ; thin film transistors (TFTs) ; 042401
• 刊名：SCIENCE CHINA Information Sciences
• 出版年：2015
• 出版时间：April 2015
• 年：2015
• 卷：58
• 期：4
• 页码：1-6
• 全文大小：534 KB
• 参考文献：1. Kim, C W, Jung, J G, Choi, J B (2011) LTPS Backplane technologies for AMLCDs and AMOLEDs. Dig Tech Paper SID Int Symp. pp. 862-865
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• 刊物类别：Computer Science
• 刊物主题：Chinese Library of Science
  Information Systems and Communication Service
  
• 出版者：Science China Press, co-published with Springer
• ISSN：1869-1919

文摘

This paper reports a simple method of fabricating self-aligned offset gate (SAOG) polycrystalline silicon (poly-Si) thin film transistors (TFTs). The SAOG structure was formed by two key steps, i.e. an isotropic photoresist trimming and an additional gate fringe etching. The fabricated SAOG devices with this proposed method exhibit a significantly suppressed off-current increase with gate bias compared with the non-offset ones, and have identical bi-directional transfer characteristics under reversed source/drain biases. It is also shown that the performances of poly-Si TFTs with metal-induced lateral crystallization can be improved significantly by annealing in forming gas.