Effects of p-type GaN thickness on optical properties of GaN-based light-emitting diodes

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• 作者：Ming-sheng Xu 徐明升 ; Heng Zhang 张恒 ; Quan-bin Zhou 周泉斌…
• 刊名：Optoelectronics Letters
• 出版年：2016
• 出版时间：July 2016
• 年：2016
• 卷：12
• 期：4
• 页码：249-252
• 全文大小：410 KB
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Applied Optics, Optoelectronics and Optical Devices
  Chinese Library of Science
  
• 出版者：Tianjin University of Technology, co-published with Springer-Verlag GmbH
• ISSN：1993-5013
• 卷排序：12

文摘

The influence of p-type GaN (pGaN) thickness on the light output power (LOP) and internal quantum efficiency (IQE) of light emitting diode (LED) was studied by experiments and simulations. The LOP of GaN-based LED increases as the thickness of pGaN layer decreases from 300 nm to 100 nm, and then decreases as the thickness decreases to 50 nm. The LOP of LED with 100-nm-thick pGaN increases by 30.9% compared with that of the conventional LED with 300-nm-thick pGaN. The variation trend of IQE is similar to that of LOP as the decrease of GaN thickness. The simulation results demonstrate that the higher light efficiency of LED with 100-nm-thick pGaN is ascribed to the improvements of the carrier concentrations and recombination rates.This work has been supported by the National High Technology Research and Development Program of China (No.2014AA032609), the National Natural Science Foundation of China (Nos.61504044, 61404050 and 51502156), the China Postdoctoral Science Foundation (Nos.2015M582384 and 2016T90782), the Major Scientific and Technological Special Project of Guangdong Province (No.2014B010119002), the Fundamental Research Funds for the Central Universities (No.2015ZM074), and the Union Funds of Guizhou Science and Technology Department and Guizhou Minzu University (No.LH20157221).