Influence of slurry components on uniformity in copper chemical mechanical planarization

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• 作者：Hyunseop Lee ; Boumyoung Park ; Haedo Jeong
• 关键词：Copper CMP ; Copper slurry ; Citric acid ; Hydrogen peroxide ; Colloidal silica ; Material removal rate (MRR) profile ; Benzotriazole (BTA)
• 刊名：Microelectronic Engineering
• 出版年：2008
• 期刊代码：91_01679317
• 类别：cp
• 出版时间：April 2008
• 卷：85
• 期：4
• 页码：689-696
• 文件大小：840 K

摘要

Many researchers studying copper chemical mechanical planarization (CMP) have been focused on mechanisms of copper removal using various chemicals. On the basis of these previous works, we studied the effect of slurry components on uniformity. Chemical mechanical planarization of copper was performed using citric acid (C₆H₈O₇), hydrogen peroxide (H₂O₂), colloidal silica, and benzotriazole (BTA, C₆H₄N₃H) as a complexing agent, an oxidizer, an abrasive, and a corrosion inhibitor, respectively. As citric acid was added to copper CMP slurry (pH 4) containing 3 vol%hydrogen peroxide and 3 wt%colloidal silica, the material removal (MRR) at the wafer center was higher than its edge. Hydrogen peroxide could not induce a remarkable change in the profile of MRR. Colloidal silica, used as an abrasive in copper CMP slurry containing 0.01 M of citric acid and 3 vol%of hydrogen peroxide, controlled the profile of MRR by abrading the wafer edge. BTA as a corrosion inhibitor decreased the MRR and seems to control the material removal around the wafer center. All the results of in this study showed that the MRR profile of copper CMP could be controlled by the contents of slurry components.