Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN

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• 作者：B.N. Feigelson^a ; ^{borisf@estd.nrl.navy.mil} ; T.J. Anderson^a ; M. Abraham^b ; J.A. Freitas^a ; J.K. Hite^a ; C.R. Eddy^a ; F.J. Kub^a
• 关键词：A3. Chemical vapor deposition processes ; B1. Nitrides ; B1. GaN
• 刊名：Journal of Crystal Growth
• 出版年：2012
• 期刊代码：49_00220248
• 类别：ch
• 出版时间：1 July, 2012
• 卷：350
• 期：1
• 页码：21-26
• 文件大小：860 K

摘要

No reliable results were reported up-to-date on electrical activation of Mg implanted GaN without co-doping with other ions. The main reason of the poor ion-implanted activation in GaN is lack of the adequate GaN annealing technique. We have developed a new approach, Multicycle Rapid Thermal Annealing to overcome this limitation and enable longer annealing times at high temperature. We have applied this new technique to Mg-implanted GaN, and demonstrated p-type conductivity.