Improved electrical conductivity in Pr₂Ni(Cu,Ga)O₄ film with nano thickness

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• 作者：Tatsumi Ishihara^a ; ^b ; ^{ishihara@cstf.kyushu-u.ac.jp} ; Ken Tominaga^a ; Junji Hyodo^a ; Maki Matsuka^a ; ^b
• 关键词：Pr2NiO4 thin film ; Hall effects ; Excess oxygen
• 刊名：International Journal of Hydrogen Energy
• 出版年：2012
• 期刊代码：42_03603199
• 类别：ch
• 出版时间：May, 2012
• 卷：37
• 期：9
• 页码：8066-8072
• 文件大小：668 K

摘要

Pr_1.91Ni_0.71Cu_0.24Ga_0.05O₄ (PNCG) thin film with few 100聽nm thickness was prepared on polycrystalline MgO substrate with pulsed laser deposition (PLD) method. The prepared film was dense and uniform, and formation of Pr₂NiO₄ phase was observed after a post annealing treatment. Electrical conductivity was significantly changed in the film and increase in conductivity was observed when the film thickness was 320聽nm. However, the conductivity decreased with decreasing the film thickness less than 300聽nm and Hall coefficient measurements suggested that the electronic hole concentration increased, however its mobility decreased in PNCG film because of the expanded lattice. Increased conductivity in the PNCG film with 320聽nm could be explained by the increased amount of electronic hole and its high mobility. XPS measurement also showed that Pr and Ni were an oxidized state comparing with that in bulk and so excess oxygen may be introduced in the PNCG thin film by charge compensation.