Double layer CuInS₂ absorber using spray pyrolysis: A better candidate for CuInS₂/In₂S₃ thin film solar cells

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• 作者：Angel Susan Cherian^a ; K.B. Jinesh^b ; Y. Kashiwaba^c ; T. Abe^c ; A.K. Balamurugan^d ; Sitaram Dash^d ; A.K. Tyagi^d ; C. Sudha Kartha^a ; K.P. Vijayakumar^a ; ^{vijayakumar.kandathil@gmail.com}
• 关键词：Spray pyrolysis ; Absorber ; Thin films ; Semiconductors ; Solar cells
• 刊名：Solar Energy
• 出版年：2012
• 期刊代码：80_0038092x
• 类别：ce
• 出版时间：June, 2012
• 卷：86
• 期：6
• 页码：1872-1879
• 文件大小：1530 K

摘要

In the fabrication of CuInS₂/In₂S₃ solar cell using chemical spray pyrolysis (CSP) deposition technique, one of the major problems is the diffusion of Cu towards the In₂S₃ layer affecting stability and repeatability of the CuInS₂/In₂S₃ cells. In order to ensure a Cu-free In₂S₃ layer, a 鈥榙ouble layer structure鈥?of CuInS₂ film, having a Cu-rich first layer and In-rich second layer was deposited using manual CSP technique. In this paper, we present the difference in material properties of single and double layered CuInS₂ films and the results of characterisation of the junctions prepared using such films with 尾-In₂S₃ films. Better crystallinity as well as larger and densely packed grains were observed for the CuInS₂ films having 鈥榙ouble layer structure鈥? Such samples also possessed two band gaps, which was not due to the presence of different phases, but due to the Cu-rich and Cu-poor layers. In addition, their low resistivity makes the double layered CuInS₂ film more beneficial for photovoltaic applications.