Determining factor of MoSe₂ formation in Cu(In,Ga)Se₂ solar Cells

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• 作者：Xiaolong Zhu^a ; Zhen Zhou^a ; Yaoming Wang^a ; ^{wangyaoming@mail.sic.ac.cn} ; Lei Zhang^a ; Aimin Li^a ; Fuqiang Huang^a ; ^b ; ^{huangfq@mail.sic.ac.cn}
• 关键词：MoSe2 thickness ; Sputtering pressure ; Na2Sex ; CIGS
• 刊名：Solar Energy Materials and Solar Cells
• 出版年：2012
• 期刊代码：81_09270248
• 类别：ce
• 出版时间：June, 2012
• 卷：101
• 期：Complete
• 页码：57-61
• 文件大小：810 K

摘要

The MoSe₂ layers, as a necessary interface layer in Cu(In,Ga)Se₂/Mo for high-efficiency Cu(In,Ga)Se₂ solar cells, were observed to form in the Mo and CIGS/Mo films during the selenization process. In order to reveal the determining factor of MoSe₂, the correlation of MoSe₂ thickness with the Mo sputtering pressure was investigated. The MoSe₂ thickness increased with decreasing the sputtering pressure. Furthermore, the dependence of MoSe₂ thickness on the deposition time of SiO₂ layer and the characterizations of X-ray photoelectron spectroscopy (XPS) and Raman spectroscopy demonstrate that the formation of Na₂Se_x compounds plays a determining role for the formation of MoSe₂ layer. The illuminated I-V characterization showed that the high series resistance of the CIGS solar cell was induced by too thick MoSe₂ layer. The significant deterioration of efficiency was observed because of the peeling-off of the absorber layer from Mo layer when the MoSe₂ layer was too thin.