Ferromagnetism in noncompensated (Mn,Ga)-codoped ZnO films

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• 作者：Jiu-Ping Fan ; Feng-Xian Jiang ; Xiu-Fang Qin ; Xiao-Hong Xu ; ^{xuxh@dns.sxnu.edu.cn}
• 关键词：Diluted magnetic semiconductor ; Pulsed laser deposition ; Noncompensated p&ndash ; n codoping ; Ferromagnetism
• 刊名：Physica B
• 出版年：2012
• 期刊代码：53_09214526
• 类别：ph
• 出版时间：15 June, 2012
• 卷：407
• 期：12
• 页码：2215-2218
• 文件大小：552 K

摘要

Mn/Ga noncompensated codoped ZnO films were prepared on c-cut sapphire substrates via pulsed laser deposition. The structural, magnetic, transport, and optical properties of the films were then investigated. Addition of the Ga donor increases the electron concentration and enhances the magnetization in these films because of the net negative charge of the special noncompensated codoping, which can adjust the carrier concentration as well as the magnetic moment. Moreover, the Fermi level moves into the conduction band because of the increase in electron concentration, which results in an increase in the optical band gap value, from 3.28 eV for the undoped ZnO film to 3.61 eV for the (Mn,Ga)-codoped ZnO film.