Influence of preheating on crystallization and growing behavior of Ce and Mn doped Ba_0.6Sr_0.4TiO₃ film by sol-gel method

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• 作者：Jiaxuan Liao ; ^{jxliao@uestc.edu.cn} ; Ziqiang Xu ; Xubo Wei ; Xiongbang Wei ; Peng Wang ; Bangchao Yang
• 关键词：Growing behavior ; Crystallization ; BST film ; Sol&ndash ; gel ; Codoping ; Preheating
• 刊名：Surface and Coatings Technology
• 出版年：2012
• 期刊代码：106_02578972
• 类别：ms
• 出版时间：25 June, 2012
• 卷：206
• 期：22
• 页码：4518-4524
• 文件大小：1650 K

摘要

Cerium and manganese codoped Ba_0.6Sr_0.4TiO₃ (CeMn-BST) film and pure BST, Ce-BST and Mn-BST films were prepared. Influence of preheating on film crystallization and growing behavior was studied. X-ray diffraction (XRD) reveals that all films mainly grow along (110) orientation and show cubic ABO₃ perovskite structures, and the preheating promotes Ce^3 + and Mn^4 + ions enter into B-sites and substitute Ti^4 + ions. Preheating enhances crystallization and causes the strongest crystallization with CeMn-codoping. Atomic force microscopy (AFM) exhibits that films preheated show layered growth, while those not preheated show island growth, which are related to layer number and doping. Therefore, the films preheated show larger permittivities, higher tunabilities, and lower dielectric losses except the pure BST film and higher figures of merit (FOMs). Preheating with CeMn-codoping causes best dielectric properties with 56%tunability, 0.0037-0.0091 loss and near 150 FOM, meeting the needs of tunable microwave applications.