Transfer of CuInS₂ thin film by lift-off process and application to superstrate-type thin-film solar cells

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• 作者：Yasuhiro Abe^a ; ^{yasu-abe@fc.ritsumei.ac.jp} ; Shintaro Osada^b ; Shohei Fukamizu^b ; Yusuke Oda^a ; Takashi Minemoto^a ; ¹ ; Koji Nakanishi^c ; Toshiaki Ohta^c ; Hideyuki Takakura^b
• 关键词：CuInS2 ; lift-off process ; superstrate-type ; thin film solar cell ; layer transfer ; MoS2
• 刊名：Thin Solid Films
• 出版年：2012
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：30 June, 2012
• 卷：520
• 期：17
• 页码：5640-5643
• 文件大小：658 K

摘要

Transfer of a CuInS₂ thin film grown on a Mo/soda-lime glass substrate was investigated using a lift-off process. The CuInS₂ thin film was flatly exfoliated, with preferential peeling occurring in the CuInS₂/MoS₂ interface vicinity. This suggests that the interfacial MoS₂ layer behaves as a sacrificial layer. The lift-off process was also applied to solar cell fabrication. A superstrate-type CuInS₂ thin-film solar cell was fabricated and exhibited no significant degradation of conversion efficiency compared with a substrate-type CuInS₂ thin-film solar cell. The lift-off process could therefore also be applied to fabricate the upper part of a tandem solar cell structure.