Atomic layer deposition of ZnO on thermal SiO₂ and Si surfaces using N₂-diluted diethylzinc and H₂O₂ precursors

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• 作者：Ke-Jia Qian^a ; Sun Chen^a ; Bao Zhu^a ; Lin Chen^a ; Shi-Jin Ding^a ; ^{sjding@fudan.edu.cn} ; ^{sjding2010@hotmail.com} ; Hong-Liang Lu^a ; Qing-Qing Sun^a ; David Wei Zhang^a ; Zhenyi Chen^b
• 关键词：ZnO ; Nanodots ; Nano-crystalline film ; Atomic layer deposition (ALD)
• 刊名：Applied Surface Science
• 出版年：2012
• 期刊代码：6_01694332
• 类别：ms
• 出版时间：1 March, 2012
• 卷：258
• 期：10
• 页码：4657-4666
• 文件大小：1430 K

摘要

ZnO nanodots are attracting more and more attention in various photoelectrical applications due to multiple excition generation. In this article, atomic layer deposition (ALD) growth of ZnO nanodots has been realized for the first time on both thermal SiO₂ and Si surfaces using N₂-diluted gaseous DEZn and H₂O₂ precursors. The experimental results indicate that the ALD ZnO exhibits a nano-crystalline film with corrugated surfaces in the case of the deposition temperature of 200 掳C, likely due to concrescence among ZnO nanodots. When the deposition temperature is increased up to 300 掳C, ZnO is grown in the form of well-discrete nanodots. This is due to increased desorption of the reacting molecules and a reduction of nucleation sites on the growing surfaces at 300 掳C, thus leading to the reaction between DEZn and OH groups only on some favorable sites from thermodynamic and energy points of view. In terms of the thermal SiO₂ surface, ZnO nanodots with a density of around 5 脳 10¹⁰ cm^鈭? are obtained for 100 cycles. As for the Si surface, ZnO nanodots with a density as high as 鈭? 脳 10¹¹ cm^鈭? are achieved for 50 cycles. Finally, the X-ray photoelectron spectroscopy and X-ray diffraction analyses reveal that the ALD ZnO at 300 掳C is dominated by ZnO bonds together with a small quantity of ZnOH bonds, and the deposition temperature of 300 掳C can result in preferential growth of ZnO (0 0 2) orientation and a bigger crystallite size.