Local structure of gold impurities in silicon determined by EXAFS

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• 作者：J. Bollmann ; T. Leisegang ; D.C. Meyer ; J. Weber and H.-E. Mahnke
• 关键词：Au ; Deep impurity ; Local structure ; XAFS ; Silicon
• 刊名：Physica B
• 出版年：2006
• 期刊代码：53_09214526
• 类别：ph
• 出版时间：1 April 2006
• 卷：376-377
• 期：Complete
• 页码：57-60
• 文件大小：211 K

摘要

The incorporation of Au atoms within the silicon lattice was determined from X-ray absorption fine structure (XAFS). A detection limit of about doses equivalent Au atoms in silicon was achieved by grazing incidence of the X-rays and fluorescence detection. Our results are (i) after Au implantation (as-implanted state) single Au atoms occupy regular high symmetric substitutional lattice sites in silicon, (ii) after thermal treatments some of the Au-atoms remain substitutional other diffuse to the sample surface. For the Au atoms near the surface very similar short range parameters as for metallic gold are detected and X-ray reflectrometry gives evidence for a near-surface segregation of gold atoms.