Silicon nanocrystals in an oxide matrix for thin film solar cells with 492 mV open circuit voltage

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• 作者：I. Perez-Wurfl ; ^{ivanpw@unsw.edu.au} ; L. Ma ; D. Lin ; X. Hao ; M.A. Green ; G. Conibeer
• 关键词：Silicon quantum dot solar cells ; Doping type determination ; MOS ; CV
• 刊名：Solar Energy Materials and Solar Cells
• 出版年：2012
• 期刊代码：81_09270248
• 类别：ce
• 出版时间：May, 2012
• 卷：100
• 期：Complete
• 页码：65-68
• 文件大小：570 K

摘要

We have fabricated solar cells with layers of co-sputtered silicon and silicon dioxide. The diode structures were fabricated by sputtering alternating layers of SiO₂ and silicon rich oxide onto quartz substrates with in-situ boron, for p-type, and phosphorus, for n-type, doping. After crystallization at 1100 掳C, isolated Si-nanocrystals are formed. The thin film layers containing these crystals act as n-type or p-type semiconductors as determined from CV measurements on MOS structures. The dark and illuminated I-Vs of the fabricated diodes show a rectifying behavior with an open circuit voltage of 492 mV under a simulated 1.5AMD illumination. A circuit model is proposed to explain the observed I-V characteristics.