Effects of Indium Doping on the Properties of Cd_1-xMn_xTe Crystals

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• 作者：Luan Lijun^a ; ^{nmllj050@chd.edu.cn} ; Jie Wanqi^b ; Wang Tao^b ; Du Yuanyuan^b
• 关键词：indium doping ; absorption edge ; IR transmittance ; photoluminescence spectrum ; Raman scattering spectrum ; magnetization
• 刊名：Rare Metal Materials and Engineering
• 出版年：2012
• 期刊代码：P57_18755372
• 类别：et
• 出版时间：March, 2012
• 卷：41
• 期：3
• 页码：383-386
• 文件大小：399 K

摘要

The near-infrared (NIR) and infrared (IR) transmissions of Indium (In) doped Cd_1-xMn_xTe (CMT) crystals were measured, and both the results show that the transmittances decline dramatically after doping. The reason is that the lattice absorption and free carriers absorption together determine the IR absorption of the crystals. The photoluminescence (PL) spectra measurements show that the donor-acceptor pair (D, A) peak is increased after doping, but the acceptor-bound exciton (A⁰, X) peak is reduced. With increasing of In concentrations the (A⁰, X) peak disappears and the (D, A) peak stands out completely. This series of changes result from that the substitutional In atoms act as donors and compensate the point defects V_Cd. The Raman scattering (RS) measurements exhibit that In doping makes the RS spectra of the longitudinal-optic (LO₁) phonon peak a slight reduction, where LO₁ is relative to the phonon peak of 鈥淐dTe-like鈥? Magnetization measurements show that the effects of In-doping on the magnetization of CMT are insignificant.