Facility for simultaneous dual-beam ion implantation

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• 作者：J.R. Kaschny ; R. Kö ; gler ; H. Tyrrof ; W. Bü ; rger ; F. Eichhorn ; A. Mü ; cklich ; C. Serre and W. Skorupa
• 关键词：Ion implantation ; Simultaneous implantation ; Radiation effects ; Ion beam synthesis ; Si ; SiC
• 刊名：Nuclear Instruments and Methods in Physics Research Section A ; Accelerators ; Spectrometers ; Detectors and Associated Equipment
• 出版年：2005
• 期刊代码：41_01689002
• 类别：ph
• 出版时间：2005
• 卷：551
• 期：2-3
• 页码：200-207
• 文件大小：311 K

摘要

The dual implantation chamber (DIC) at Rossendorf Center for Application of Ion Beams in Materials Research allows materials to be implanted using two ion beams simultaneously. This facility is located at the 45^o cross point of two beam lines, one from a single-ended HVEE 500 kV ion implanter and the other from a HVEE 3 MV Tandetron accelerator. Each beam line is equipped with independent ion fluence and current control. The special design of the beam sweeping system, enables both ion beams to scan the target surface simultaneously in synchronous mode, i.e. both ion spots are kept at coincident positions over the target. Experiments, concerning the formation of SiC nanoclusters in Si by high-dose C and simultaneous Si implantation, are reported.