Use of numerical simulation for growing high-quality sapphire crystals by the Kyropoulos method

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• 作者：S.E. Demina ; E.N. Bystrova ; V.S. Postolov ; E.V. Eskov ; M.V. Nikolenko ; D.A. Marshanin ; V.S. Yuferev ; V.V. Kalaev
• 关键词：A1. Computer simulation ; A1. Mass transfer ; A2. Kyropoulos method ; B1. Sapphire
• 刊名：Journal of Crystal Growth
• 出版年：2008
• 期刊代码：49_00220248
• 类别：ch
• 出版时间：April 2008
• 卷：310
• 期：7-9
• 页码：1443-1447
• 文件大小：717 K

摘要

In the present work, an advanced numerical model is suggested to analyze heat transfer and flow pattern in sapphire crystal growth by the Kyropoulos technique. The new approach accounts for radiative heat exchange in the crystal and convection in the melt, and provides prediction of the crystallization front shape. The model allowed the analysis of several growth setup designs and selection of an optimal configuration. The numerical predictions performed with the CGSim software (www.semitech.us) agree well with available experimental data obtained in optimized crystal growth process reported for the first time.