Preparation of Cu₂ZnSnS₄ thin films by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction method

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• 作者：Zhenghua Su ; Chang Yan ; Kaiwen Sun ; Zili Han ; Fangyang Liu ; ^{liufangyang@csu.edu.cn} ; Jin Liu ; Yanqing Lai ; ^{laiyanqingcsu@163.com} ; Jie Li ; Yexiang Liu
• 关键词：Cu2ZnSnS4 ; Thin film ; SILAR ; Solar cell
• 刊名：Applied Surface Science
• 出版年：2012
• 期刊代码：6_01694332
• 类别：ms
• 出版时间：15 July, 2012
• 卷：258
• 期：19
• 页码：7678-7682
• 文件大小：864 K

摘要

Earth-abundant Cu₂ZnSnS₄ is a promising alternative photovoltaic material which has been examined as absorber layer of thin film solar cells. In this study, Cu₂ZnSnS₄ (CZTS) thin films have been successfully fabricated by sulfurizing stacked precursor thin films via successive ionic layer adsorption and reaction (SILAR) method. The prepared CZTS thin films have been characterized by X-ray diffraction, energy dispersive spectrometer, Raman spectroscopy, UV-vis spectroscopy, Hall effect measurements and photoelectrochemical tests. Results reveal that the thin films have kesterite structured Cu₂ZnSnS₄ and the p-type conductivity with a carrier concentration in the order of 10¹⁸ cm^鈭? and an optical band gap of 1.5 eV, which are suitable for applications in thin film solar cells.