Structure and microwave dielectric properties of Bi_1.5Zn_1.0Nb_1.5O₇ thin films deposited on alumina substrates by pulsed laser deposition

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• 作者：Xiaohua Zhang ; ^{zhangcity@126.com} ; Wei Ren ; ^{wren@mail.xjtu.edu.cn} ; Xuelei Zhan ; Zhao Wang ; Peng Shi ; Xiaofeng Chen ; Xiaoqing Wu ; Xi Yao
• 关键词：Bismuth zinc niobate ; Thin films ; Pulsed laser deposition ; Microwave dielectric properties ; Split-post dielectric resonator method
• 刊名：Thin Solid Films
• 出版年：2012
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：1 June, 2012
• 卷：520
• 期：16
• 页码：5141-5145
• 文件大小：683 K

摘要

Bi_1.5Zn_1.0Nb_1.5O₇ (BZN) thin films were deposited on polycrystalline alumina substrates by pulsed laser deposition at different substrate temperatures. The phase structure and surface morphology were characterized using X-ray diffractometer (XRD) and atomic force microscopy. Microwave dielectric properties were performed using split-post dielectric resonator method at spot frequencies of 10, 15 and 19 GHz, respectively. The XRD results indicate that the as-deposited Bi_1.5Zn_1.0Nb_1.5O₇ thin films deposited at 650 掳C are amorphous in nature. The dielectric permittivity and loss tangent of the amorphous BZN thin films are 75.5 and 0.013 at 10 GHz, respectively. As the measure frequency increased to 19 GHz, the dielectric permittivity slightly decreases and loss tangent slightly increases. BZN thin films were crystallized after the post-annealing by a rapid thermal annealing in air for 30 min. The crystallized BZN thin films exhibit the excellent dielectric properties and frequency responses. The dielectric permittivity and loss tangent of the crystallized BZN thin films are 154 and 0.038 at 10 GHz, respectively.