Electrodeposited AgInSe₂ onto TiO₂ films for semiconductor-sensitized solar cell application: The influence of electrodeposited time

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• 作者：Lung-Chuan Chen^a ; ^{lcchen@mail.ksu.edu.tw} ; Yi-Ching Ho^a ; Ru-Yuan Yang^b ; Jean-Hong Chen^a ; Chao-Ming Huang^a
• 关键词：Electrodeposition ; AgInSe2 ; Sensitized solar cells ; Titanium dioxide
• 刊名：Applied Surface Science
• 出版年：2012
• 期刊代码：6_01694332
• 类别：ms
• 出版时间：15 June, 2012
• 卷：258
• 期：17
• 页码：6558-6563
• 文件大小：1304 K

摘要

The influence of electrodeposited time (EDT) on Ag-In-Se species growth onto TiO₂ films for possible semiconductor-sensitized solar cells (SSSCs) application was investigated. XRD analysis illustrated that the Ag-In-Se film was predominantly comprised by AgInSe₂ species with tetragonal body structure and crystal size of 6.05-7.50 nm when EDT was in the region of 15-60 min at a bias of 鈭?.25 V (verse Hg/Hg₂SO₄ (MSE)). Scanning electron microscope (SEM) indicated a high porosity of AgInSe₂/ITO morphology, permitting electrolytes freely percolated through these films. The prepared AgInSe₂ films exhibited n-type semiconductor behavior with two band gap energies at 1.27 and 1.80 eV. Photoelectrochemical measurement reflected that open circuit potential varied little with EDT, however, significant change was associated with short circuit current and fill factor (FF), causing the AgInSe₂/TiO₂ films with EDT of 45 min exhibited the best solar to electricity conversion efficiency of 0.26%. The AgInSe₂/TiO₂ films with EDT of 45 min demonstrated the longest electron lifetime according to the open circuit voltage decay analysis.