Vacuum, temperature, and time dependencies of field-emission current for RF-MEMS applications
- 作者：Kiyotaka Yamashita ; Winston Sun ; Benoit Charlot ; Kuniyuki Kakushima ; Hiroyuki Fujita ; Hiroshi Toshiyoshi
- 关键词：RF-MEMS ; Field-emission ; Vacuum micro-electronics
- 刊名：Microelectronic Engineering
- 出版年：2007
- 期刊代码：91_01679317
- 类别：cp
- 出版时间：May-August 2007
- 卷：84
- 期：5-8
- 页码：1345-1353
- 文件大小：1770 K
摘要
We propose to utilize the field-emission (FE) effect on a novel micro-machined device to modulate the incoming radio-frequency signal for RF-MEMS (radio-frequency micro-electro-mechanical system) applications. In this paper, we present some preliminary results such as pressure and temperature dependencies of the FE current. We also notice that by annealing the device inside the vacuum chamber at 200 °C for 20 min, large FE current (85 nA) at low voltage (3 V) can be produced. The leakage current was reduced by employing a silicon-on-insulator (SOI) wafer with thicker buried-oxide layer. Fabrication procedures and experimental results will be discussed.