Creation and clustering of Frenkel defects at high density of electronic excitations in wide-gap materials

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• 作者：A. Lushchik^a ; ^{aleksandr.lushchik@ut.ee} ; Ch. Lushchik^a ; K. Schwartz^b ; F. Savikhin^a ; E. Shablonin^a ; A. Shugai^a ; E. Vasil’ ; chenko^a
• 关键词：Radiation defects ; Non-impact mechanisms ; Luminescence ; Metal oxides ; LiF
• 刊名：Nuclear Instruments and Methods in Physics Research Section B ; Beam Interactions with Materials and Atoms
• 出版年：2012
• 期刊代码：42_0168583x
• 类别：ph
• 出版时间：15 April, 2012
• 卷：277
• 期：Complete
• 页码：40-44
• 文件大小：441 K

摘要

A complex nature of the dependence of the intensity of intrinsic or impurity emission on the excitation density by single electron pulses is determined by the existence or absence of self-trapped holes and/or excitons in ZnS, BaF₂, MgO, BeO and Al₂O₃. A powerful electron (300 keV) or ion (Au, U, 鈭? GeV) irradiation of pure and doped LiF, MgO and Al₂O₃ crystals induces the optical absorption, certain high-temperature annealing stages of which appear only under high LET conditions. Swift-ion-irradiation causes drastic changes in the spectrum of fundamental reflection of LiF, especially in the region of the exciton resonance. The irradiation providing high density of electronic excitations (LET > 20 keV/nm) leads not only to the creation of stable Frenkel defects but also to the excitation of a whole group of crystal ions, thus, causing the creation of bivacancies, lithium and fluorine interstitials as well as their associations/clusters.