Effective hole-injection layer for non-doped inverted top-emitting organic light-emitting devices

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• 作者：Yanlong Meng ; Wenfa Xie ; Ning Zhang ; Shufen Chen ; Jiang Li ; Wei Hu ; Yi Zhao ; Jingying Hou ; Shiyong Liu
• 关键词：ITEOLEDs ; MoO_x ; Hole-injection
• 刊名：Microelectronics Journal
• 出版年：2008
• 期刊代码：72_00262692
• 类别：ms
• 出版时间：May 2008
• 卷：39
• 期：5
• 页码：723-726
• 文件大小：603 K

摘要

Non-doped inverted top-emitting organic light-emitting diode with high efficiency is demonstrated through employing an effective hole-injection layer composed of MoO_x. One reason for high efficiency lies on the energy-level matching between MoO_x and hole-transport, and another is due to the Ohmic contact formed between MoO_x and Ag. Both of them lead to an improvement of the hole-injection capability from Ag top anode. Moreover, the symmetrical current of “hole-only” device with MoO_x shows better hole-injection capability, which is independent of the deposition sequence. The optimized device with MoO_x hole-injection layer exhibits maximum current efficiency of 3.7 cd/A at a raised luminance level of 14,900 cd/m² and a maximum luminance of 47,000 cd/m² under 18 V.