Hf_xZr_{1鈭?span style='font-style: italic'>x}O₂ films chemical vapor deposited from a single source precursor of anhydrous Hf_xZr_{1鈭?span style='font-style: italic'>x}(NO₃)₄

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• 作者：Wenqi Zhang ; Liuying Huang ; Aidong Li ; ^{adli@nju.edu.cn} ; Di Wu
• 关键词：A3. Chemical vapor deposition (CVD) ; B1. Anhydrous mixed-metal nitrate ; B1. HfxZr1&minus ; x(NO3)4 ; B1. HfxZr1&minus ; xO2 ; B2. High-k materials
• 刊名：Journal of Crystal Growth
• 出版年：2012
• 期刊代码：49_00220248
• 类别：ch
• 出版时间：1 May, 2012
• 卷：346
• 期：1
• 页码：12-16
• 文件大小：1055 K

摘要

A single-source precursor Hf_xZr_1鈭?em>x(NO₃)₄ (HZN) has been successfully synthesized, and used for chemical vapor deposition of Hf_xZr_1鈭?em>xO₂ films. X-ray photoelectron spectroscopy (XPS) measurement shows that Hf/Zr ratio in the Hf_xZr_1鈭?em>xO₂ films is in good agreement with that in the precursor determined by inductive coupled plasma (ICP) measurement, indicating precise composition transfer from the precursor to deposited films. Basic characteristics of the Hf_xZr_1鈭?em>xO₂ films such as chemical bonding, composition, film structure, band gap and electrical properties etc. were carried out using different analysis techniques.