Effect of the n/p tunnel junction on the performance of a-Si:H/a-Si:H/渭c-Si:H triple-junction solar cells
- 作者：X.X. Zheng ; X.D. Zhang ; xdzhang@nankai.edu.cn ; S.S. Yang ; S.Z. Xu ; C.C. Wei ; Y. Zhao
- 关键词：Tunnel-junction ; Triple-junction ; Single-chamber ; Microcrystalline silicon
- 刊名：Solar Energy Materials and Solar Cells
- 出版年：2012
- 期刊代码：81_09270248
- 类别：ce
- 出版时间：June, 2012
- 卷：101
- 期：Complete
- 页码：15-21
- 文件大小：394 K
摘要
We present our research and development of fabricating 渭c-Si:H bottom cells on a-Si:H/a-Si:H double-junction solar cells made in a commercial production line to make a-Si:H/a-Si:H/渭c-Si:H triple-junction solar cells. The 渭c-Si:H bottom cells were deposited in a single-chamber system. We studied the n/p tunnel junction between the a-Si:H middle and 渭c-Si:H bottom cells by optimizing the hydrogen plasma treatment time, the 渭c-Si:H n layer, and the 渭c-Si:H p layer. We found that a proper combination of the three key elements can form a high-quality n/p tunnel junction with electrical and optical properties suitable for the triple-junction solar cells. We used the optimized n/p tunnel junction in a-Si:H/a-Si:H/渭c-Si:H p-i-n-type triple-junction solar cells and improved the cell performance significantly, mainly from the increased open-circuit voltage and fill factor. We further optimized the 渭c-Si:H bottom cells. Combining the optimized n/p tunnel junction and high performance 渭c-Si:H bottom cell, we made a-Si:H/a-Si:H/nc-Si:H triple-junction solar cells having an initial efficiency of 8.85%, which is 21%higher than the conversion efficiency of the a-Si:H/a-Si:H tandem solar cells from the current production line.