Microwave power SiC MESFETs and GaN HEMTs

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• 作者：Zhang ; A.P. ; Rowland ; L.B. ; Kaminsky ; E.B. ; Kretchmer ; J.W. ; Beaupre ; R.A. ; Garrett ; J.L. ; Tucker ; J.B. ; et. al.
• 刊名：Solid-State Electronics
• 出版年：2003
• 期刊代码：73_00381101
• 类别：ph
• 出版时间：May, 2003
• 卷：47
• 期：5
• 页码：821-826
• 文件大小：415 K

摘要

We have fabricated SiC metal semiconductor field effect transistors (MESFETs) with more than 60 W of output power at 450 MHz from single 21.6 mm gate periphery devices (2.9 W/mm) and 27 W of output power at 3 GHz from single 14.4 mm SiC MESFET devices (1.9 W/mm). We have also demonstrated more than 6.7 W/mm CW power from 400 μm GaN/AlGaN high electron mobility transistors devices for X band (10 GHz) applications. These excellent device performances have been attributed to the improved substrate and epitaxial films quality, optimized device thermal management, and enhanced device fabrication technologies. The substrates and epitaxial films from different sources were compared and some showed significant less SiC substrate micropipes confirmed by X-ray topography and epitaxial defects characterized by optical defect mapping.