Growth of vertical and defect free InP nanowires on SrTiO₃(001) substrate and comparison with growth on silicon

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• 作者：K. Naji^a ; ^{khalid_n18@hotmail.com} ; H. Dumont^a ; G. Saint-Girons^a ; J. Penuelas^a ; G. Patriarche^b ; M Hocevar^c ; V. Zwiller^c ; M. Gendry^a
• 关键词：A1. Crystal structure ; A1. Nanostructures ; A3. Molecular beam epitaxy ; B1. Nanomaterials ; B1. Perovskites ; B2. Semiconducting III&ndash ; V materials
• 刊名：Journal of Crystal Growth
• 出版年：2012
• 期刊代码：49_00220248
• 类别：ch
• 出版时间：15 March, 2012
• 卷：343
• 期：1
• 页码：101-104
• 文件大小：897 K

摘要

We present a study of the molecular beam epitaxy of InP nanowires (NWs) on (001) oriented SrTiO₃ (STO) substrates using vapor liquid solid mechanism and gold-indium as metal catalyst. The growth direction of InP NWs grown on STO(001) is compared with NWs grown on (001) and (111) oriented silicon substrates. Gold-indium dewetting under a flux of indium results in the majority of InP NWs growing vertically from the surface of STO(001). With the growth parameters we have used the NWs have a pure wurtzite structure and are free of stacking faults and cubic segments. The structural quality of the NWs is confirmed by micro-photoluminescence measurements showing a narrow peak linewidth of 6.5 meV.