摘要
The nanoelectromechanical system (NEMS) switches based on all single crystal diamond were reported both in experiments and in modeling. In the all-diamond NEMS switch, boron-doped diamond epilayer was utilized to obtain the electrical conductivity, while the type-Ib diamond substrate acted as an excellent insulator. The developed diamond NEMS switches exhibited good controllability, reproducibility, and reliability. Finite element analysis was employed to simulate the operation of the NEMS switch. The experimental data were consistent with the numerical simulation, resulting in a Young's modulus of 1100 GPa for diamond. The simulation revealed that the pull-in voltage of the single crystal diamond three-terminal NEMS switches could be controlled by the drain voltage.