The meta-stable dip (MSD) effect in SOI FinFETs

详细信息	查看全文 | 推荐本文 |

• 作者：Jang-Gn Yun ; Maryline Bawedin ; Sorin Cristoloveanu ; Denis Fl ; re ; Hi-Deok Lee
• 关键词：MSD effect ; Floating-body effect ; Transient effect ; SOI ; FinFETs
• 刊名：Microelectronic Engineering
• 出版年：2007
• 期刊代码：91_01679317
• 类别：cp
• 出版时间：April 2007
• 卷：84
• 期：4
• 页码：590-593
• 文件大小：217 K

摘要

The meta-stable dip (MSD) effect is demonstrated and characterized in SOI FinFETs. With ascending scan of front-gate voltage (V_G1), the magnitude of drain current (I_D) tends to be fixed within a specific region of the front-gate voltage and this leads to a dip of transconductance (g_m). The dip width can be modulated through a control of bias condition or measurement speed such as back-gate voltage (V_G2), drain voltage (V_D) and step size of the front-gate voltage. From the dual-gate transient measurement, it is found that the MSD effect is highly dependent on the floating-body effect. In SOI FinFETs, the MSD effect is significantly affected by the fin width due to the fringing electric field of the lateral gates.