Chemical bath deposition of SnO₂ and Cd₂SnO₄ thin films

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• 作者：Hani Khallaf^a ; Chia-Ta Chen^b ; ^c ; Liann-Be Chang^b ; ^c ; Oleg Lupan^a ; ^d ; Aniruddha Dutta^a ; ^e ; Helge Heinrich^a ; ^e ; Firoze Haque^a ; Enrique del Barco^a ; Lee Chow^a ; ^b ; ^c ; ^e ; ^{Lee.Chow@ucf.edu}
• 关键词：SnO2 ; Cd2SnO4 ; Transparent conducting oxides ; Thin films ; Chemical bath deposition
• 刊名：Applied Surface Science
• 出版年：2012
• 期刊代码：6_01694332
• 类别：ms
• 出版时间：1 June, 2012
• 卷：258
• 期：16
• 页码：6069-6074
• 文件大小：1220 K

摘要

A new approach of chemical bath deposition (CBD) of SnO₂ thin films is reported. Films with a 0.2 渭m thickness are obtained using the multi-dip deposition approach with a deposition time as little as 8-10 min for each dip. The possibility of fabricating a transparent conducting oxide layer of Cd₂SnO₄ thin films using CBD is investigated through successive layer deposition of CBD-SnO₂ and CBD-CdO films, followed by annealing at different temperatures. High quality films with transmittance exceeding 80%in the visible region are obtained. Annealed CBD-SnO₂ films are orthorhombic, highly stoichiometric, strongly adhesive, and transparent with an optical band gap of 鈭?.42 eV. Cd₂SnO₄ films with a band gap as high as 3.08 eV; a carrier density as high as 1.7 脳 10²⁰ cm^鈭?; and a resistivity as low as 1.01 脳 10^鈭? 惟 cm are achieved.