Competitive and cost effective copper/low-k interconnect (BEOL) for 28 nm CMOS technologies

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• 作者：R. Augur¹ ; ^{rod.augur@globalfoundries.com} ; C. Child¹ ; J.H. Ahn³ ; T.J. Tang² ; L. Clevenger⁴ ; D. Kioussis¹ ; H. Masuda⁷ ; R. Srivastava² ; Y. Oda⁵ ; H. Oguma⁷ ; R. Quon⁴ ; B. Kim⁶ ; H. Sheng² ; S. Hirooka⁷ ; R. Gupta¹ ; A. Thomas⁴ ; S.M. Singh² ; Q. Fang² ; R. Schiwon⁸ ; B. Hamieh⁶ ; E. Wornyo⁴ ; S. Allen⁴ ; E. Kaltalioglu⁸ ; G. Ribes⁶ ; G. Zhang² ; T. Fryxell¹ ; A. Ogino⁷ ; E. Shimada⁷ ; H. Aizawa⁵ ; H. Minda⁵ ; S.O. Kim⁸ ; T. Oki⁷ ; K. Fujii⁷ ; M. Pallachalil⁸ ; T. Takewaki⁵ ; C.K. Hu⁴ ; B. Sundlof⁴ ; D. Permana¹ ; T. Bolom¹ ; B. Engel⁴ ; C. Labelle¹ ; B. Sapp⁴ ; T. Nogami⁴ ; A. Simon⁴ ; H. Shobha⁴ ; S. Gates⁴ ; E.T. Ryan⁴ ; G. Bonilla⁴ ; T. Daubenspeck⁴ ; T. Shaw⁴ ; G. Osborne⁴ ; A. Grill⁴ ; D. Edelstein⁴ ; D. Restaino⁴ ; S. Molis⁴ ; T. Spooner⁴ ; P. Ferreira⁶ ; G. Biery⁴ ; R. Sampson⁶
• 关键词：Cu/low-k ; ULK ; Interconnect ; BEOL ; 28  ; nm
• 刊名：Microelectronic Engineering
• 出版年：2012
• 期刊代码：91_01679317
• 类别：cp
• 出版时间：April, 2012
• 卷：92
• 期：Complete
• 页码：42-44
• 文件大小：626 K

摘要

A cost effective 28 nm CMOS Interconnect technology is presented for 28 nm node high performance and low power applications. Full entitlement of ultra low-k (ULK) inter-level dielectric is enabled. Copper wiring levels can be combined up to a total of 11 levels. The inter-level dielectric was optimized for low k-value and high strength. The feature profiles were optimized to enable defect-free metallization using conventional tools and processes. High yields and robust reliability were demonstrated.