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Impact of thickness on vacuum deposited PbSe thin films
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摘要
Lead Selenide thin films were prepared by vacuum evaporation technique with different thickness ranges from 50 to 200聽nm on glass substrates. The structural studies revealed that the prepared films are strongly oriented on (2 0 0) plane with rock-salt crystal structure. The various structural parameters such as grain size (D), lattice constant (a), micro strain () and dislocation density () were calculated. The surface morphology of the films was also analyzed. The optical absorption of the films starts with visible region and obtained energy gap of the films lies between 1.5 and 1.9聽eV. The room temperature Photoluminescence spectrum shows the emission peak at visible region (380-405聽nm) and the blue shift was observed with decreasing the film thickness. The electrical mobility, resistivity, carrier concentration and mean free path (L) of the free carriers of the films were studied for all the samples and compared.

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