Modeling the uniform transport in thin film SOI MOSFETs with a Monte-Carlo simulator for the 2D electron gas
- 作者：Luca Lucci ; Pierpaolo Palestri ; David Esseni and Luca Selmi
- 关键词：Mobility modeling ; Scattering mechanisms ; Monte-Carlo method ; Silicon-on-insulator (SOI) ; Ultra-thin silicon thicknesses
- 刊名：Solid-State Electronics
- 出版年：2005
- 期刊代码：73_00381101
- 类别：ph
- 出版时间：2005
- 卷：49
- 期：9
- 页码：1529-1535
- 文件大小：348 K
摘要
In this paper, we present simulations of some of the most relevant transport properties of the inversion layer of ultra-thin film SOI devices with a self-consistent Monte-Carlo transport code for a confined electron gas. We show that size induced quantization not only decreases the low-field mobility (as experimentally found in [Uchida K, Koga J, Ohba R, Numata T, Takagi S. Experimental eidences of quantum-mechanical effects on low-field mobility, gate-channel capacitance and threshold voltage of ultrathin body SOI MOSFETs, IEEE IEDM Tech Dig 2001;633–6; Esseni D, Mastrapasqua M, Celler GK, Fiegna C, Selmi L, Sangiorgi E. Low field electron and hole mobility of SOI transistors fabricated on ultra-thin silicon films for deep sub-micron technology application. IEEE Trans Electron Dev 2001;48(12):2842–50; Esseni D, Mastrapasqua M, Celler GK, Fiegna C, Selmi L, Sangiorgi E, An experimental study of mobility enhancement in ultra-thin SOI transistors operated in double-gate mode, IEEE Trans Electron Dev 2003;50(3):802–8. [1], [2] and [3]]), but also the electron saturation velocity and the carrier heating depend on the subband structure, and thus on the silicon film thickness.