However, a minor slow component shows up in the charge-integrated sample response. A systematic speed up of this slow component when increasing the detector temperature from − 25 °C to + 50 °C demonstrates its thermally activated origin. The slow component is therefore attributed to detrapping effects from shallow trapping centres.
A model of the charge transport mechanism in the presence of trapping–detrapping centres can be developed and the results can be compared to the experimental ones. The activation energy of the shallow defects is accordingly determined as Ea = 0.4 eV.
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