Understanding device performance by incorporating 2D-carrier profiles from high resolution scanning spreading resistance microscopy into device simulations

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• 作者：Aftab Nazir^a ; ^b ; ^{aftab.nazir@imec.be} ; Pierre Eyben^a ; Trudo Clarysse^a ; Geert Hellings^a ; ^c ; Andreas Schulze^a ; ^b ; Jay Mody^a ; ^b ; Kristin De Meyer^a ; ^b ; Hugo Bender^a ; Wilfried Vandervorst^a ; ^b
• 关键词：SSRM ; MOSFETs ; 2D-carrier profiles ; Process/device simulation ; DIBL
• 刊名：Solid-State Electronics
• 出版年：2012
• 期刊代码：73_00381101
• 类别：ph
• 出版时间：August, 2012
• 卷：74
• 期：Complete
• 页码：38-42
• 文件大小：660 K

摘要

In this paper we present a procedure and software allowing to predict and understand device performance by incorporating two dimensional (2D)-carrier profiles obtained from high vacuum scanning spreading resistance microscopy (HV-SSRM) into a device simulator. We demonstrate the incorporation of quantified SSRM 2D-carrier profiles obtained on p-MOSFETs into a device simulator. The simulated electrical characteristics (based on the measured 2D-carrier profiles) of the device show nice agreement with the experimentally obtained device results, whereas calculations based on process simulations with available advanced calibration showed significant discrepancies. With this approach the difficult and time consuming calibration step of the process simulation can be circumvented and device results can be interpreted directly based on the details of the real 2D-carrier profiles.