摘要
MgB2 thin films were prepared by ex-situ annealing of Mg/B multilayers. Different precursor, substrate and annealing condition were investigated. After annealed in a flow of Mg vapor with reducing hydrogen ambient for 1-4 min, high quality 20 nm-thick c-oriented MgB2 thin films with and critical current density JC = 2 脳 106 A cm鈭? at 30 K were obtained. The mean roughness of the 20 nm-thick film was 2.68 nm.