Current-voltage temperature characteristics of Au/n-Ge (1 0 0) Schottky diodes

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• 作者：Albert Chawanda^a ; ^b ; ^{albert.chawanda@up.ac.za} ; Wilbert Mtangi^b ; Francois D Auret^b ; Jacqueline Nel^b ; Cloud Nyamhere^c ; Mmantsae Diale^b
• 关键词：Schottky contacts ; Current&ndash ; voltage&ndash ; temperature ; Schottky barrier height ; Gaussian distribution ; Inhomogeneities
• 刊名：Physica B
• 出版年：2012
• 期刊代码：53_09214526
• 类别：ph
• 出版时间：15 May, 2012
• 卷：407
• 期：10
• 页码：1574-1577
• 文件大小：418 K

摘要

The variation in electrical characteristics of Au/n-Ge (1 0 0) Schottky contacts have been systematically investigated as a function of temperature using current-voltage (I鈭?em>V) measurements in the temperature range 140-300 K. The I-V characteristics of the diodes indicate very strong temperature dependence. While the ideality factor n decreases, the zero-bias Schottky barrier height (SBH) (桅_B) increases with the increasing temperature. The I-V characteristics are analyzed using the thermionic emission (TE) model and the assumption of a Gaussian distribution of the barrier heights due to barrier inhomogeneities at the metal-semiconductor interface. The zero-bias barrier height 桅_B vs. 1/2 kT plot has been used to show the evidence of a Gaussian distribution of barrier heights and values of 桅_B=0.615 eV and standard deviation 蟽_s0=0.0858 eV for the mean barrier height and zero-bias standard deviation have been obtained from this plot, respectively. The Richardson constant and the mean barrier height from the modified Richardson plot were obtained as 1.37 A cm^鈭? K^鈭? and 0.639 eV, respectively. This Richardson constant is much smaller than the reported of 50 A cm^鈭? K^鈭?. This may be due to greater inhomogeneities at the interface.