Plasma treatment effects on Si and Si/dielectric film heterostructures

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• 作者：C. Di Franco ; N. Cioffi ; N. Ditaranto ; M.S. Vitiello ; M. Sibilano ; L. Torsi ; G. Scamarcio
• 关键词：Plasma-enhanced chemical vapour deposition ; Plasma activation ; Silicon dioxide ; Silicon nitride
• 刊名：Journal of Materials Processing Technology
• 出版年：2008
• 期刊代码：102_09240136
• 类别：et
• 出版时间：12 September 2008
• 卷：206
• 期：1-3
• 页码：462-466
• 文件大小：441 K

摘要

A multi-step plasma procedure for the fabrication of high-quality SiO₂/Si interfaces and the functionalization of silicon dioxide surfaces has been developed for microelectronic manufacturing industry. The substrate activation based on a plasma-enhanced chemical vapour deposition (PECVD) has been developed in order to obtain high quality SiO₂/Si heterostructures. The SiO₂ films have been then exposed to additional PECVD processes in order to modify the dielectric surface by polar groups. The advantage of this method consists in the possibility of activating the substrate, depositing and functionalizing high-quality SiO₂ films in a single run process, at low temperature, and by means of the same equipment.