NH₃-rich growth of InGaN and InGaN/GaN superlattices by NH₃-based molecular beam epitaxy

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• 作者：J.R. Lang ; ^{jrlang@umail.ucsb.edu} ; J.S. Speck
• 关键词：A1. Crystal morphology ; A3. Molecular beam epitaxy ; A3. Superlattices ; B1. Nitrides ; B2. Semiconducting indium compounds
• 刊名：Journal of Crystal Growth
• 出版年：2012
• 期刊代码：49_00220248
• 类别：ch
• 出版时间：1 May, 2012
• 卷：346
• 期：1
• 页码：50-55
• 文件大小：843 K

摘要

N-rich growth by NH₃-based molecular beam epitaxy was investigated for intermediate-temperature GaN and InGaN on c-plane GaN templates. The dependences of growth mode and surface morphology on group-V overpressure, In/Ga ratio, and temperature were explored with atomic force microscopy and high resolution x-ray diffraction. Extension to an 鈥渦ltra-NH₃-rich鈥?regime of very high NH₃-flows showed a decreased growth rate and increased In-content for InGaN alloys for constant group III source fluxes. Rapid modulation of NH₃ overpressure, growth rate, and substrate temperature has enabled the growth of high quality, many-period InGaN/GaN superlattices, while suppressing morphological instabilities and subsequent stress relaxation.