Nb₂O₅ doping effect on electrical properties of ZnO-V₂O₅-Mn₃O₄ varistor ceramics

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• 作者：Choon-W. Nahm ; ^{cwnahm@deu.ac.kr}
• 关键词：B. Grain boundaries ; C. Electrical properties ; D. ZnO ; E. Varistors
• 刊名：Ceramics International
• 出版年：2012
• 期刊代码：13_02728842
• 类别：ms
• 出版时间：August, 2012
• 卷：38
• 期：6
• 页码：5281-5285
• 文件大小：878 K

摘要

The microstructure and electrical properties of ternary ZnO-V₂O₅-Mn₃O₄ varistor ceramics modified with Nb₂O₅ were systematically investigated for different amounts of Nb₂O₅. The average grain size for Nb₂O₅-doped ceramics was larger than Nb₂O₅-free ceramics and it was in the range of 6.64-7.27 渭m. The sintered density of pellets increased from 5.50 to 5.54 g/cm³ as the Nb₂O₅ amount increased. The breakdown field increased from 947 to 4521 V/cm with an increase in the amount of Nb₂O₅, whereas a further addition caused it to decrease up to 4374 V/cm at 0.25 mol%. The varistor ceramics doped with 0.05 mol%Nb₂O₅ exhibited the best nonlinear properties, in which the nonlinear coefficient is 47 and the leakage current density is 0.14 mA/cm².