Fundamental optical and electrical properties of nano-Cu₃VS₄ thin film

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• 作者：X.S. Lv ; Z.H. Deng ; F.X. Miao ; G.X. Gu ; Y.L. Sun ; Q.L. Zhang ; S.M. Wan ; ^{smwan@aiofm.ac.cn}
• 关键词：Nano-Cu3VS4 thin film ; Pulsed laser deposition ; Absorbing layer material ; Absorption coefficient ; Electrical conductivity
• 刊名：Optical Materials
• 出版年：2012
• 期刊代码：81_09253467
• 类别：ch
• 出版时间：June, 2012
• 卷：34
• 期：8
• 页码：1451-1454
• 文件大小：294 K

摘要

Nano-Cu₃VS₄ thin films were prepared by pulsed laser deposition (PLD) method; the fundamental optical and electrical properties were studied in order to evaluate its application prospect as an absorbing layer material for use in thin film solar cells. The optimal nano-Cu₃VS₄ thin film was deposited at 500 掳C (the substrate temperature) for 40 min with a pulsed KrF laser (5 Hz, 120 mJ/pulse). The obtained thin film is black, homogeneous with good adherence to the substrate; the average crystallite size is about 23 nm. The bandgap of the nano-Cu₃VS₄ thin film, determined from the spectroscopic ellipsometry data, was found to be 1.35 eV. Its absorption coefficients are larger than 10⁵ cm^鈭? when the wavelength is shorter than 720 nm. The nano-Cu₃VS₄ has a near direct bandgap structure which is different from the bulk Cu₃VS₄. Its dark conductivity is about 1.88 惟^鈭? cm^鈭? at room temperature and the calculated conductivity activation energy is around 24 meV. All of the optical and electrical behaviors show that the nano-Cu₃VS₄ is a potential absorbing layer material for use in the thin film solar cells.