Deposition of TiO₂ on silicon by sputtering in hollow cathode

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• 作者：F.O. de Ara&#xfa ; jo ; E.O. de Almeida ; Jr. ; C. Alves ; J.A.P. da Costa ; T. Dumelow
• 关键词：Hollow cathode ; Sputtering ; TiO₂ thin film
• 刊名：Surface and Coatings Technology
• 出版年：2006
• 期刊代码：106_02578972
• 类别：ms
• 出版时间：4 December 2006
• 卷：201
• 期：6
• 页码：2990-2993
• 文件大小：336 K

摘要

In the present work we use a plasma jet system with a hollow cathode to deposit thin TiO₂ films on silicon substrates. The cylindrical cathode, made from pure titanium, can be negatively polarized between 0 and 1200 V and supports an electrical current of up to 1 A. An Ar/O₂ mixture, with a total flux of 20 sccm and an O₂ percentage ranging from 0 to 20%, is passed through a cylindrical hole machined in the cathode. The influence of the cathode's parameters on the properties of deposited TiO₂ films and their deposition rate is studied. When discharge occurs, titanium atoms are sputtered/evaporated. They are transported by the jet and deposited on the Si substrates located on the holder placed facing the plasma jet system at a distance ranging from 10 to 50 mm from the cathode. The working pressure is 10^{− 3} mbar and the deposition time is 10–60 min. The deposited films are characterized by X-ray diffraction to analyze qualitatively the phases present.