Low-temperature bonding technique for fabrication of high-power GaN-based blue vertical light-emitting diodes

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• 作者：Wen-Jie Liu^a ; ^b ; Xiao-Long Hu^a ; ^b ; Jiang-Yong Zhang^a ; Guo-En Weng^a ; ^b ; Xue-Qin Lv^b ; Hui-Jun Huang^c ; Ming Chen^a ; ^b ; Xiao-Mei Cai^a ; ^b ; Lei-Ying Ying^a ; Bao-Ping Zhang^a ; ^b ; ^{bzhang@xmu.edu.cn}
• 关键词：GaN ; Low-temperature bonding ; Vertical light-emitting diode (LED)
• 刊名：Optical Materials
• 出版年：2012
• 期刊代码：81_09253467
• 类别：ch
• 出版时间：June, 2012
• 卷：34
• 期：8
• 页码：1327-1329
• 文件大小：501 K

摘要

Low-temperature Sn fusion bonding technique was proposed to fabricate GaN-based blue vertical light-emitting diodes (LEDs) on Si substrate. First, by studying photoluminescence (PL) spectra of GaN LED epilayers/Ag-based mirror/Si structures fabricated at different bonding temperatures, it was confirmed that the quality of Ag-based mirror was not degraded when the bonding temperature was 250 掳C. Then GaN-based blue vertical LEDs were fabricated at this bonding temperature. As compared with conventional GaN-based LEDs, the vertical LEDs revealed improved forward current-voltage characteristic, especially, the reverse current of the vertical LEDs was as low as 39 nA at the reverse bias of 鈭?0 V. In the mean time, vertical LEDs showed an increase in light output of about 127%at 200 mA, and no saturation was observed as the driving current increased to 500 mA. Further measurement revealed that vertical LEDs had a much lower junction temperature. These results indicate that the Sn fusion bonding technique is an effective way for fabrication of high-power GaN-based LEDs.