In situ formation of indium catalysts to synthesize crystalline silicon nanowires on flexible stainless steel substrates by PECVD

详细信息	查看全文 | 推荐本文 |

• 作者：Xiaobing Xie ; ^{xbxie@semi.ac.cn} ; Xiangbo Zeng ; Ping Yang ; Chao Wang ; Qiming Wang
• 关键词：A1. Low dimensional structures ; A3. Chemical vapor deposition processes ; B1. Nanomaterials ; B2. Semiconducting silicon
• 刊名：Journal of Crystal Growth
• 出版年：2012
• 期刊代码：49_00220248
• 类别：ch
• 出版时间：15 May, 2012
• 卷：347
• 期：1
• 页码：7-10
• 文件大小：793 K

摘要

Intrinsic and n-type silicon nanowires were synthesized on flexible stainless steel substrates by plasma-enhanced chemical vapor deposition. Indium nanoparticles fabricated by hydrogen plasma treatment on flexible stainless steel substrates were used as metal catalysts. The differences between intrinsic and n-type silicon nanowires were investigated. The crystal structure of the nanowires was characterized by electron microscopy and X-ray diffraction. It is shown that the as-synthesized silicon nanowires were single crystals and the intrinsic silicon nanowires had better morphology and tended to have higher concentration twin crystals than the n-type silicon nanowires. The phosphorus atom percentage of the n-type silicon nanowires was 2.17%as determined by energy dispersive spectroscopy. The SiNWs on the glass substrates has lower reflectance than the SiNWs on the flexible stainless steel substrates in the range 750-1100 nm wavelengths.