A variational method for the description of the pressure-induced Γ–X mixing in GaAs-based quantum wells

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• 作者：M.E. Mora-Ramos ; S.Y. Ló ; pez ; C.A. Duque
• 关键词：GaAs quantum wells ; none ; color ; black" href="/science?_ob=MathURL&_method=retrieve&_udi=B6VMT-4PJV1HN-8&_mathId=mml11&_user=1067359&_cdi=6159&_rdoc=86&_acct=C000050221&_version=1&_userid=10&md5=1358b17bcfc792a
• 刊名：Physica E
• 出版年：2008
• 期刊代码：139_13869477
• 类别：et
• 出版时间：March 2008
• 卷：40
• 期：5
• 页码：1212-1213
• 文件大小：143 K

摘要

The mixing between Γ and X conduction band valleys in GaAs–Ga_1-xAl_xAs quantum wells is investigated along the lines of a variational model. Trial wavefunctions are depending on a weighting variational parameter that accounts for the mixing by acting as a coefficient in the combination of both uncorrelated Γ and X states in the system. The dependencies of the calculated binding energy of a donor impurity and the correlated electron–hole photoluminescence peak energy upon hydrostatic pressure and quantum well width are presented.