Modification of new photoelectric material GaN by implantation of H⁺, He⁺ and N⁺ ion beam

详细信息	查看全文 | 推荐本文 |

• 作者：Shude ; Yao ; Shengqiang ; Zhou ; Shengxian ; Jiao ; Zhaoxiang ; Meng ; Yihong ; Lu ; Changchun ; Sun ; Chang ; Sun ; et. al.
• 关键词：Ion implantation ; Rutherford backscattering spectrometry ; Hall effect
• 刊名：Surface and Coatings Technology
• 出版年：2002
• 期刊代码：106_02578972
• 类别：ms
• 出版时间：September, 2002
• 卷：158-159
• 期：Complete
• 页码：412-415
• 文件大小：211 K

摘要

The structure and crystal quality of GaN using Rutherford Backscattering Spectrometry and Channeling were studied. The samples were grown on sapphire by metal-organic vapor-phase epitaxy. The H⁺, He⁺, N⁺ with different ion energies and doses were implanted into GaN. Post-implantation annealing were investigated. We observed 7–8 orders increasing of resistivity by Hall measurements after specific temperature annealing, and the optimized annealing temperature is approximately 200–400 °C for H⁺, He⁺ and N⁺ respectively. Even after 600–700 °C annealing, the resistivity is still very high. We think vacancies and radioactive damage by implantation are responsible for resistivity changes in GaN samples.