Green emissions and related defects in ZnO:Ga thin films

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• 作者：Zheng-Zheng Li^a ; ^b ; Ming Bao^a ; Shao-Hui Chang^b ; Zhi-Zhan Chen^b ; Xue-Ming Ma^a ; ^{astamina_li@hotmail.com}
• 关键词：GZO thin films ; Green emissions ; Defects ; Oxygen partial pressure
• 刊名：Vacuum
• 出版年：2012
• 期刊代码：83_0042207x
• 类别：ph
• 出版时间：27 April, 2012
• 卷：86
• 期：10
• 页码：1448-1451
• 文件大小：670 K

摘要

ZnO:Ga(GZO) thin films were grown on quartz glass under different oxygen partial pressures (PO₂). The intensity and the profile of green emission spectra were strongly influenced by PO₂. The PL spectra of samples revealed green emissions were relating to transitions between the neutral Ga substitution donor (Ga_Zn) and oxygen interstitial acceptor (O_i). Multi-Gaussian fitting showed green emissions consisted of two adjacent bands located at 2.50聽eV and 2.65聽eV, which corresponded to and transitions, respectively. Concentrations of and were increased with the increasing PO₂ is the reason why green emissions were influenced by PO₂.