Electronic transport for pristine and doped crossed graphene nanoribbon junctions with zigzag interfaces

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• 作者：Benhu Zhou^a ; ^{zhoubenhu@163.com} ; Benliang Zhou^b ; Aihua Zeng^a ; Guanghui Zhou^b
• 关键词：Electronic transport ; GNRs ; NEGF method combined with density functional theory ; NDR
• 刊名：Physics Letters A
• 出版年：2012
• 期刊代码：57_03759601
• 类别：ph
• 出版时间：16 April, 2012
• 卷：376
• 期：20
• 页码：1710-1713
• 文件大小：327 K

摘要

Using the fully self-consistent non-equilibrium Green始s function (NEGF) method combined with density functional theory, we investigate numerically the electronic transport property for pristine and doped crossed graphene nanoribbon (GNR) junctions. It is demonstrated that in the case of zigzag interfaces, the I-V characteristics of the junction with or without doping always show semiconducting behavior, which is different from that in the case of armchair interfaces [Zhou, Liao, Zhou, Chen, Zhou, Eur. Phys. J. B 76 (2010) 421]. Interestingly, negative differential resistance (NDR) behavior can be clearly observed in a certain bias region for nitrogen-doped shoulder crossed junction. A mechanism for the NDR behavior is suggested.