北京第三代半导体产业发展思路的研究
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摘要
第三代半导体是以碳化硅(SiC)和氮化镓(GaN)为代表的新一代半导体材料,它们拥有高频高效、耐高压、耐高温等特性,是支撑轨道交通、新能源汽车、5G等产业的核心材料和电子元器件。北京市作为我国第三代半导体发展的重镇,具备丰富的科技资源和产业基础,聚集了诸如世纪金光、天科合达、泰科天润等知名生产制造企业。研究并实施北京第三代半导体产业的发展大计,不仅是助推北京市经济结构的优化,更是完善中国第三代半导体产业布局、助推产业成长的重要举措。
The third generation semiconductor is a new generation of semiconductor materials represented by silicon carbide(SiC) and gallium nitride(GaN). They have the characteristics of high frequency, high efficiency, high voltage resistance and high temperature resistance. They are the core materials and electronic components to support rail transit, new energy vehicles and 5G industries.As the third generation of semiconductor development in China, Beijing has abundant scientific and technological resources and industrial foundation, gathering well-known manufacturing enterprises such as Century Golden Light, Tianke Heda, Tyco Tianrun and so on. To study and implement the development plan of the third generation semiconductor industry in Beijing is not only to promote the optimization of Beijing's economic structure, but also to improve the layout of the third generation semiconductor industry in China and promote the growth of the industry.
The third generation semiconductor is a new generation of semiconductor materials represented by silicon carbide(SiC) and gallium nitride(GaN). They have the characteristics of high frequency, high efficiency, high voltage resistance and high temperature resistance. They are the core materials and electronic components to support rail transit, new energy vehicles and 5G industries.As the third generation of semiconductor development in China, Beijing has abundant scientific and technological resources and industrial foundation, gathering well-known manufacturing enterprises such as Century Golden Light, Tianke Heda, Tyco Tianrun and so on. To study and implement the development plan of the third generation semiconductor industry in Beijing is not only to promote the optimization of Beijing's economic structure, but also to improve the layout of the third generation semiconductor industry in China and promote the growth of the industry.
引文
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[2]王文.1200VSiCBJT器件仿真及实验研究[D].四川:电子科技大学,2018.
[3]李晋闽.新旧动能转换引领第三代半导体产业创新发展[J].中国科技产业,2018(01):54-55+51.
[4]卜文娟.第三代半导体:2018年是产业化准备的关键期[J].中国战略新兴产业,2018(05):30-32.
[5]林佳,黄浩生.第三代半导体带来的机遇与挑战[J].集成电路应用,2017,34(12):83-86.
[6]李春,邓君楷.第三代半导体产业概况剖析[J].集成电路应用,2017,34(02):87-90.
[7]瞄准科技产业名城东莞再推升级版《行动计划》新政[N].科技日报,2017-09-27.
[8]第三代半导体制造业创新中心在东莞成立[N].中国电子报,2018-06-12.
[9]张洪刚,苏海红,庞松涛,张涛,李永平,崔建军.深圳市激发创新主体内生动力的启示与思考[J].青海科技,2018,25(03):7-11.
[10]谢曦.建成逾百条智能生产线[N].泉州晚报,2016-11-26.
[11]张国铭.智能化时代,国产集成电路制造装备发展的新机遇[J].集成电路应用,2018,35(01):56-57.
[12]北京中电科:8英寸集成电路封装关键装备通过鉴定实现产业化[J].电子工业专用设备,2014,43(12):63.
[13]赵佶.中科院物理所成功研制6英寸碳化硅单晶衬底[J].半导体信息,2014(06):30.
[14]江安庆.中国实现碳化硅大功率器件批量生产,有望缓解能源危机[J].半导体信息,2014(01):39-40.
[15]刘超.泰科天润:创新贯穿企业竞争始终[J].新材料产业,2017(04):9-10.
[16]我国首个碳化硅新型充电桩示范工程在京启动[J].电源世界,2017(05):4.
[17]靳卫明.陈强:“触觉”感知提升充电桩智能化[N].新能源汽车报,2017-05-08(016).
[18]赵佶.京津冀共建第三代半导体联合创新基地[J].半导体信息,2015(03):41.