Array制程光刻胶残留不良改善方法研究
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摘要
光刻胶剥离制程为TFT-LCD制造Array基板的重要制程,剥离与洗净效果决定TFT产品质量。光刻胶残留是其主要不良。本文分析光刻胶残留的现象和成因,通过剥离设备的结构调整与保养、工艺参数的优化来改善光刻胶残留。研究表明,通过优化技术人员作业手法,增大剥离区间流量,严格管控剥离液药液浓度和水洗区间清洁与改造等的联合运用,可以有效避免光刻胶的大面积残留,提高产品质量,减少重剥而降低产能Loss,同时最大限度降低对真空设备的影响。
in TFT-LCD industry Array manufacturing,large photoresist remain(PR Remain)defect after left-off has great influence on the quality,yield and directly relates to the effectiveness of manufacturing enterprises.In this article,we analyzed the morphology and the causes of PR Remain and introduces the better prevent of PR Remain through equipment cleaning and maintenance,optimizing the process conditions,Such as stripper and water flow,and modifying the construction of equipment.The research shows that the combined utilization of optimize operation technique and Stripper maintenance,can effectively decrease PR remain occurrence,and reduce to the restrip ratio of array mass production(MP).Meanwhile,the quality and efficiency of production was improved and the influence on Vacuum equipment was reduced.
in TFT-LCD industry Array manufacturing,large photoresist remain(PR Remain)defect after left-off has great influence on the quality,yield and directly relates to the effectiveness of manufacturing enterprises.In this article,we analyzed the morphology and the causes of PR Remain and introduces the better prevent of PR Remain through equipment cleaning and maintenance,optimizing the process conditions,Such as stripper and water flow,and modifying the construction of equipment.The research shows that the combined utilization of optimize operation technique and Stripper maintenance,can effectively decrease PR remain occurrence,and reduce to the restrip ratio of array mass production(MP).Meanwhile,the quality and efficiency of production was improved and the influence on Vacuum equipment was reduced.
引文
[1]马群刚.TFT-LCD原理与设计[M].北京:北京电子工业出版社,2011:1,12-15.
[2]赵成阳,魏杰.光刻胶发展概述[J].信息记录材料,2015,16(5):42-49.
[3]Jia peng Li,Lei Lu,Zhihe Xia,Hoi Sing Kwok.Three-Mask Elevated-Metal Metal-Oxide Thin-Film Transistor With Self-Aligned Definition of the Active Island.IEEE ELECTRON DEVICE LETTERS,2018,1(39):35-38.
[4]Wen-Ching,Jer-Yeong Lai,Kou-Yuan Tu,Han-Tu and Feng-Yuan Gan.A novel barriedess Cu gate for TFT-LCD[J].SID 2006 Digest,1181-1184.
[5]马彩霞,郝起林.光刻胶剥离制程中的问题分析[J].文化产业,2014:12.
[2]赵成阳,魏杰.光刻胶发展概述[J].信息记录材料,2015,16(5):42-49.
[3]Jia peng Li,Lei Lu,Zhihe Xia,Hoi Sing Kwok.Three-Mask Elevated-Metal Metal-Oxide Thin-Film Transistor With Self-Aligned Definition of the Active Island.IEEE ELECTRON DEVICE LETTERS,2018,1(39):35-38.
[4]Wen-Ching,Jer-Yeong Lai,Kou-Yuan Tu,Han-Tu and Feng-Yuan Gan.A novel barriedess Cu gate for TFT-LCD[J].SID 2006 Digest,1181-1184.
[5]马彩霞,郝起林.光刻胶剥离制程中的问题分析[J].文化产业,2014:12.